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  rev.2.00 sep 07, 2005 page 1 of 6 2SK2426 silicon n channel mos fet rej03g1013-0200 (previous: ade-208-1361) rev.2.00 sep 07, 2005 application high speed power switching features ? low on-resistance ? high speed switching ? low drive current ? no secondary breakdown ? suitable for switching regulator, dc-dc converter. outline renesas package code: prss0003ae-a (package name: to-220c?fm) d g s 1. gate 2. drain 3. source 1 2 3 g
2SK2426 rev.2.00 sep 07, 2005 page 2 of 6 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 250 v gate to source voltage v gss 30 v drain current i d 12 a drain peak current i d(pulse) * 1 48 a body to drain diode reverse drain current i dr 12 a channel dissipation pch* 2 35 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1 % 2. value at tc = 25 c electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 250 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 30 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ? ? 10 a v gs = 25 v, v ds = 0 zero gate voltage drain current i dss ? ? 250 a v ds = 250 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 ? 3.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) ? 0.23 0.35 ? i d = 6 a, v gs = 10 v* 3 forward transfer admittance |y fs | 5.0 8.0 ? s i d = 6 a, v ds = 10 v* 1 input capacitance ciss ? 1100 ? pf output capacitance coss ? 440 ? pf reverse transfer capacitance crss ? 68 ? pf v ds = 10 v, v gs = 0, f = 1 mhz turn-on delay time t d(on) ? 20 ? ns rise time t r ? 65 ? ns turn-off delay time t d(off) ? 100 ? ns fall time t f ? 44 ? ns i d = 6 a, v gs = 10 v, r l = 5 ? body to drain diode forward voltage v df ? 1.0 ? v i f = 12 a, v gs = 0 body to drain diode reverse recovery time t rr ? 200 ? ns i f = 12 a, v gs = 0, di f / dt = 100 a / s note: 3. pulse test unit test 250 ? ? v i d = 10 ma, v 30 ? ? v i g = 10 a v ? ? 250 a v 2.0 ? 3.0 v i ? 0.23 0.35 | 5.0 8.0 ? s i ciss ? 1100 ? pf coss ? 440 ? pf reverse transfer capacitance crss ? 68 ? pf d(on) ? 20 ? ns t r ? 65 ? ns r ? 65 ? ns r t d(off) ? 100 ? ns t f ? 44 ? ns f ? 44 ? ns f body to drain diode forward voltage v df ? 1.0 ? v i body to drain diode reverse t rr ? 200 ? ns
2SK2426 rev.2.00 sep 07, 2005 page 3 of 6 main characteristics 1 3 10 30 100 300 100 0 0.1 0.3 1 3 10 30 100 100 s pw = 10 ms (1 shot) 10 s operation in this area is limited by r ds(on) 1 ms ta = 25c dc operation (tc = 25c) 0 4 8 12 16 20 4 8 12 16 20 5.5 v 5 v 4.5 v 10 v 6 v v gs = 4 v tc = 75c 25c ? 25c v ds = 10 v pulse test 0 2 4 6 8 10 2 4 6 8 10 0 4 8 12 16 20 1 2 4 3 5 pulse test pulse test 10 a 5 a i d = 2 a 0.5 1 2 5 10 20 50 0.05 0.1 0.2 0.5 1 2 5 pulse test 15 v v gs = 10 v case temperature t c (c) power vs. temperature derating channel dissipation pch (w) drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) typical output characteristics drain current i d (a) gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) drain to source saturation voltage vs. gate to source voltage drain current i d (a) static drain to source on state resistance r ds (on) (?) static drain to source on state resistance vs. drain current 60 40 20 50 100 150 0 0 4 8 12 16 20 = 4 v v ds = 10 v pulse test 6 8 10 drain to source voltage v drain to source voltage v ds (v) drain current i d (a) typical transfer characteristics drain to source saturation voltage vs. gate to source voltage
2SK2426 rev.2.00 sep 07, 2005 page 4 of 6 case temperature t c (c) static drain to source on state resistance r ds (on) (?) static drain to source on state resistance vs. temperature drain current i d (a) forward transfer admittance ?y fs ? (s) forward transfer admittance vs. drain current reverse recovery time t rr (ns) body to drain diode reverse recovery time reverse drain current i dr (a) drain to source voltage v ds (v) capacitance c (pf) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) dynamic input characteristics gate to source voltage v gs (v) drain current i d (a) switching time t (ns) switching characteristics ? 40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 2 a 5 a pulse test v gs = 10 v i d = 10 a tc = ?25c 25c 75c v ds = 10 v pulse test 0.1 0.2 0.5 1 2 5 10 0.5 1 2 5 10 20 50 0.2 0.5 1 2 5 10 20 5 10 200 100 500 50 di / dt = 100 a / s v gs = 0, ta = 25c 20 0 10 20 30 40 50 10 100 1000 10000 v gs = 0 f = 1 mhz ciss coss crss 0 8 16 24 32 40 0 100 200 300 400 500 100 v 50 v v gs v ds v dd = 200 v i d = 12 a v dd = 200 v 100 v 50 v 20 16 12 8 4 0 0.1 0.2 0.5 1 2 5 10 5 10 20 50 100 200 500 v gs = 10 v, v dd = 30 v pw = 2 s, duty 1 % . . t d (off) t f t d (on) t r reverse drain current i dr (a) capacitance c (pf) typical capacitance vs. drain to source voltage dynamic input characteristics 1 2 5 10 20 1000 v gs = 0 f = 1 mhz f = 1 mhz f = 1 mhz
2SK2426 rev.2.00 sep 07, 2005 page 5 of 6 source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage 0 0.4 0.8 1.2 1.6 2.0 4 8 12 16 pulse test 0, ? 5 v v gs = 10 v 20 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 3.57c/w, tc = 25 c tc = 25c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse normalized transient thermal impedance vs. pulse width 100 1shot pulse
2SK2426 rev.2.00 sep 07, 2005 page 6 of 6 package dimensions 10.0 0.3 3.2 0.2 12.0 0.3 2.7 0.2 15.0 0.3 13.6 1.0 0.7 0.1 2.5 0.2 4.5 0.3 2.54 2.54 1.0 0.2 1.15 0.2 0.6 0.1 4.1 0.3 package name prss0003ae-a to-220cfm / to-220cfmv mass[typ.] 1.9g ? renesas code jeita package code unit: mm ordering information part name quantity shipping container 2SK2426-e 600 pcs box (tube) note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product. quantity note: for some grades, production may be terminated. please production before ordering the product.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas technology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvements or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas technology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materials. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to "http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas technology korea co., ltd. kukje center bldg. 18th fl., 191, 2-ka, hangang-ro, yongsan-ku, seoul 140-702, korea tel: <82> 2-796-3115, fax: <82> 2-796-2145 renesas technology malaysia sdn. bhd. unit 906, block b, menara amcorp, amcorp trade centre, no.18, jalan persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: <603> 7955-9390, fax: <603> 7955-9510 renesas sales offices ? 2005. renesas technology corp., all rights reserved. printed in japan. colophon .3.0 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o please also pay attention to information published by renesas technology corp. by various means, including the renesas techn 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a evaluate all information as a total system before making a final decision on the applicability of the information and products. no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materi 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lic any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is 8. please contact renesas technology corp. for further details on these materials or the products contained therein. http://www.renesas.com/en/network " for the latest and detailed information. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071


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